Publication Type
Conference Paper
Publication Date
Page Number
32
Volume
N/A
Conference Name
20th Annual Meeting of the IEEE Lasers and Electro-Optics Society
Conference Location
Lake Buena Vista, California, United States of America
Conference Date
-
Abstract
Cross-section of multilayer InAs/GaAs quantum dot heterostructure has been characterized using scanning capacitance microscope to investigate dopant incorporation into quantum dot. Simulation of corresponding band structure was used to better understand the experiment result.
