Publication Type
Conference Paper
Book Title
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Publication Date
Page Numbers
255 to 258
Conference Name
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2018)
Conference Location
San Diego, California, United States of America
Conference Sponsor
IEEE
Conference Date
-
Abstract
We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.
