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OAK RIDGE, Tenn., May 5, 2020 — By 2050, the United States will likely be exposed to a larger number of extreme climate events, including more frequent heat waves, longer droughts and more intense floods, which can lead to greater risks for human health, ecosystem stability and regional economies.
In the early 2000s, high-performance computing experts repurposed GPUs — common video game console components used to speed up image rendering and other time-consuming tasks
In the race to identify solutions to the COVID-19 pandemic, researchers at the Department of Energy’s Oak Ridge National Laboratory are joining the fight by applying expertise in computational science, advanced manufacturing, data science and neutron science.
Biological membranes, such as the “walls” of most types of living cells, primarily consist of a double layer of lipids, or “lipid bilayer,” that forms the structure, and a variety of embedded and attached proteins with highly specialized functions, including proteins that rapidly and selectively transport ions and molecules in and out of the cell.
We have a data problem. Humanity is now generating more data than it can handle; more sensors, smartphones, and devices of all types are coming online every day and contributing to the ever-growing global dataset.
An international team of researchers has discovered the hydrogen atoms in a metal hydride material are much more tightly spaced than had been predicted for decades — a feature that could possibly facilitate superconductivity at or near room temperature and pressure.
A team from the ORNL has conducted a series of experiments to gain a better understanding of quantum mechanics and pursue advances in quantum networking and quantum computing, which could lead to practical applications in cybersecurity and other areas.
Scientists at have experimentally demonstrated a novel cryogenic, or low temperature, memory cell circuit design based on coupled arrays of Josephson junctions, a technology that may be faster and more energy efficient than existing memory devices.
For more than 50 years, scientists have debated what turns particular oxide insulators, in which electrons barely move, into metals, in which electrons flow freely.