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A new method to control quantum states in a material is shown. The electric field induces polarization switching of the ferroelectric substrate, resulting in different magnetic and topological states. Credit: Mina Yoon, Fernando Reboredo, Jacquelyn DeMink/ORNL, U.S. Dept. of Energy

An advance in a topological insulator material — whose interior behaves like an electrical insulator but whose surface behaves like a conductor — could revolutionize the fields of next-generation electronics and quantum computing, according to scientists at ORNL.

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Scientists at Oak Ridge National Laboratory and Hypres, a digital superconductor company, have tested a novel cryogenic, or low-temperature, memory cell circuit design that may boost memory storage while using less energy in future exascale and quantum computing applications.